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| DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36P06SLG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP36P06SLG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP36P06SLG PACKAGE TO-252 (MP-3ZK) FEATURES * Super low on-state resistance RDS(on)1 = 30 m MAX. (VGS = -10 V, ID = -18 A) RDS(on)2 = 40 m MAX. (VGS = -4.5 V, ID = -18 A) * Low input capacitance Ciss = 3200 pF TYP. * Built-in gate protection diode (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg -60 m20 m36 m108 56 1.2 175 -55 to +175 23.4 54.8 V V A A W W C C A mJ Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = -30 V, RG = 25 , VGS = -20 0 V THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 2.68 125 C/W C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18008EJ5V0DS00 (5th edition) Date Published November 2007 NS Printed in Japan 2006 The mark NP36P06SLG ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 TEST CONDITIONS VDS = -60 V, VGS = 0 V VGS = m20 V, VDS = 0 V VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -18 A VGS = -10 V, ID = -18 A VGS = -4.5 V, ID = -18 A VDS = -10 V, VGS = 0 V, f = 1 MHz VDD = -30 V, ID = -18 A, VGS = -10 V, RG = 0 MIN. TYP. MAX. -10 m10 UNIT A A V S -1.0 12 -2.0 -2.5 Drain to Source On-state Resistance 24 27 3200 350 205 7 12 190 110 30 40 m m pF pF pF ns ns ns ns nC nC nC Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = -48 V, VGS = -10 V, ID = -36 A IF = -36 A, VGS = 0 V IF = -36 A, VGS = 0 V, di/dt = 100 A/s 52 6.9 15 1.2 46 75 V ns nC Note Pulsed test PW 350 s, Duty Cycle 2% TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG. VGS = -20 0 V - ID VDD 50 L VDD PG. BVDSS VDS VGS(-) 0 Starting Tch = 1 s Duty Cycle 1% VDS Wave Form TEST CIRCUIT 2 SWITCHING TIME D.U.T. RL RG VDD VDS(-) 90% 10% 10% 90% VGS(-) VGS Wave Form 0 10% VGS 90% IAS VDS 0 td(on) ton tr td(off) toff tf TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = -2 mA PG. 50 RL VDD 2 Data Sheet D18008EJ5V0DS NP36P06SLG TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 80 120 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA -1000 ID(pulse) 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 TC - Case Temperature - C ID - Drain Current - A -100 d it e im V ) )L i0 on S( -1 R D GS = (V PW =1 i0 0 s -10 D 1 ID(DC) C m s 10 m r we Po ss Di s -1 TC = 25C Single pulse a ip n ti o Li m d ite -0.1 -0.1 -1 -10 -100 VDS - Drain to Source Voltage - V 1000 rth(t) - Transient Thermal Resistance - C/W TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(ch-A) = 125C/W 100 10 Rth(ch-C) = 2.68C/W 1 Single pulse 0.1 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D18008EJ5V0DS 3 NP36P06SLG DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS -150 -1000 -100 TA = -55C 25C 125C 175C ID - Drain Current - A -100 VGS = -10 V ID - Drain Current - A -10 -1 -0.1 -0.01 -4.5 V -50 Pulsed 0 0 -2 -4 -6 -8 -10 VDS - Drain to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(th) - Gate to Source Cut-off Voltage - V | yfs | - Forward Transfer Admittance - S VDS = -10 V Pulsed 0 -1 -2 -3 -4 -5 -0.001 VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 VDS = -10 V Pulsed 10 TA = -55C 25C 125C 175C -3 -2.5 -2 -1.5 -1 -0.5 0 -100 VDS = -10 V ID = -1 mA -50 0 50 100 150 200 1 0.1 -0.1 -1 -10 -100 Tch - Channel Temperature - C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m RDS(on) - Drain to Source On-state Resistance - m ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 80 70 60 50 40 30 20 10 0 -1 -10 -100 -1000 ID - Drain Current - A 50 40 30 20 10 0 0 -5 -10 -15 -20 VGS - Gate to Source Voltage - V Pulsed VGS = -4.5 V -10 V ID = -18 A Pulsed 4 Data Sheet D18008EJ5V0DS NP36P06SLG DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m 60 55 50 45 40 35 30 25 20 15 10 5 0 -100 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 Ciss, Coss, Crss - Capacitance - pF Ciss 1000 Coss 100 Crss VGS = 0 V f = 1 MHz 10 -0.1 -1 -10 -100 VGS = -4.5 V -10 V ID = -18 A Pulsed -50 0 50 100 150 200 Tch - Channel Temperature - C SWITCHING CHARACTERISTICS VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1000 td(off) 100 tf VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns -60 -50 -40 -30 VGS -20 -10 0 VDS ID = -36 A VDD = -48 V -30 V -12 V -12 -10 -8 -6 -4 -2 0 0 20 40 60 QG - Gate Charge - nC REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT VGS - Gate to Source Voltage - V 10 tr td(on) VDD = -30 V, VGS = -10 V RG = 0 1 -0.1 -1 -10 -100 ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE -1000 -100 -10 0V -1 -0.1 Pulsed -0.01 0 0.5 1 1.5 1000 VGS = -10 V trr - Reverse Recovery Time - ns IF - Diode Forward Current - A 100 10 di/dt = 100 A/s VGS = 0 V 1 -0.1 -1 -10 -100 VF(S-D) - Source to Drain Voltage - V IF - Diode Forward Current - A Data Sheet D18008EJ5V0DS 5 NP36P06SLG PACKAGE DRAWING (Unit: mm) TO-252 (MP-3ZK) 1.0 TYP. 6.50.2 5.1 TYP. 4.3 MIN. 4 2.30.1 0.50.1 No Plating 6.10.2 10.4 MAX. (9.8 TYP.) 4.0 MIN. 1 0.8 2 3 No Plating 0 to 0.25 0.50.1 1.0 1.14 MAX. 2.3 2.3 0.760.12 1. Gate 2. Drain 3. Source 4. Fin (Drain) EQUIVALENT CIRCUIT Drain Gate Gate Protection Diode Body Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 0.51 MIN. Data Sheet D18008EJ5V0DS NP36P06SLG * The information in this document is current as of November, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). 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